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US 2008/0258254 A1Published application
Process for realizing an integrated electronic circuit with two active layer portions having different crystal orientations
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorFrederic Boeuf
Life of this patent
Estimating the term…
Abstract
A process for realizing an integrated electronic circuit makes it possible to obtain transistors with p-type conduction and transistors with n-type conduction, in respective active zones having crystal orientations adapted to each conduction type. In addition, each active zone is electrically insulated from a primary substrate of the circuit, so that the entire circuit is compatible with SOI technology.
Claims25
A process for realizing an integrated electronic circuit, comprising:
- obtaining an SOI substrate, said SOI substrate including:
- a primary substrate based on monocrystalline silicon,
- an initial insulating layer on a surface of the primary substrate, and
- an initial active layer based on monocrystalline silicon, on the initial insulating layer on a side opposite the primary substrate, with the primary substrate and the initial active layer having different respective crystal orientations relative to the surface of the primary substrate;
- selectively etching the initial active and insulating layers in a second zone of the SOI substrate, relative to a first zone of said SOI substrate, so as to expose a surface of the primary substrate in said second zone;
- selectively forming in the second zone, by epitaxy starting from the exposed surface of the primary substrate, a stack comprising a monocrystalline temporary layer and a monocrystalline additional active layer, with the additional active layer being placed on a side of the temporary layer opposite the primary substrate and having the crystal orientation of said primary substrate;
- forming a supporting portion rigidly connected to the additional active layer, and to the primary substrate independently of the temporary layer;
- selectively etching the temporary layer, with the additional active layer being held in place by the supporting portion;
- forming an additional insulating layer in place of the temporary layer;
- and
- realizing first and second transistors in the first and second zones of the substrate respectively, with said first transistor having a first channel situated in the initial active layer and said second transistor having a second channel situated in the additional active layer.
8 more elements
An integrated electronic circuit comprising:
- a primary substrate based on monocrystalline silicon;
- first and second insulating layers placed on a surface of the primary substrate at separate respective zones of said primary substrate;
- monocrystalline first and second active layers respectively placed above said first and second insulating layers, the first and second active layers having different crystal orientations relative to the surface of the primary substrate, and the primary substrate having a crystal orientation corresponding to that of one of said first and second active layers;
- a first transistor having a first channel situated in said first active layer;
- a second transistor having a second channel situated in said second active layer;
- and
- an electrically insulating barrier situated between the zones of the primary substrate, wherein the second insulating layer is positioned at least partially above a top surface of the insulating barrier.
4 more elements
An electrical device comprising:
- an integrated electronic circuit that includes:
- a primary substrate based on monocrystalline silicon;
- first and second insulating layers placed on a surface of the primary substrate at separate respective zones of said primary substrate;
- monocrystalline first and second active layers respectively placed above said first and second insulating layers, the first and second active layers having different crystal orientations relative to the surface of the primary substrate, and the primary substrate having a crystal orientation corresponding to that of one of said first and second active layers;
- a first transistor having a first channel situated in said first active layer;
- a second transistor having a second channel situated in said second active layer;
- and
- an electrically insulating barrier situated between the zones of the primary substrate, wherein the second insulating layer is positioned at least partially above a top surface of the insulating barrier, with said device being one of a portable telephone, a computer, a television set, a server, a router, and a gaming console.
5 more elements
An integrated electronic circuit comprising:
- a monocrystalline primary substrate;
- first and second insulating layers placed on a surface of the primary substrate at separate respective zones of said primary substrate;
- monocrystalline first and second active layers respectively placed above said first and second insulating layers, the first and second active layers having different crystal orientations relative to the surface of the primary substrate, and the primary substrate having a crystal orientation corresponding to that of one of said first and second active layers;
- a first transistor having a first channel situated in said first active layer;
- and
- a second transistor having a second channel situated in said second active layer and a conductive gate having a central portion, positioned on a top side of the second active portion, and end support portions positioned on lateral sides of the second active portion, the end support portions supporting the central portion on the primary substrate.
3 more elements
Dependencies are inferred from the claim text.