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US 2008/0258238 A1Published application
Semiconductor Device Manufactured Using an Oxygenated Passivation Process During High Density Plasma Deposition
AssigneeTexas Instruments Incorporated
InventorDuncan M. Rogers
Life of this patent
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Abstract
In one aspect, the method comprises forming trenches in a semiconductor substrate and filling the trenches with a dielectric material. The process of filling the trenches includes depositing the dielectric material with a plasma gas mixture, etching the dielectric material with a chemical etch including nitrogen fluoride and using a passivation process to passivate the dielectric material after etching with a gas mixture that includes oxygen and hydrogen.
Claims20
A method of manufacturing a semiconductor device, comprising:
- placing a hardmask over a semiconductor substrate;
- patterning the hardmask to form openings therein;
- etching through the openings to form trenches in the semiconductor substrate;
- and
- filling the trenches with a dielectric material, including:
- depositing the dielectric material with a plasma gas mixture including silane, hydrogen, and oxygen;
- etching the dielectric material with a chemical etch including a gas mixture of nitrogen trifluoride, hydrogen, and helium;
- and
- passivating the dielectric material, after etching, with a gas mixture that includes oxygen and hydrogen, wherein a flow rate of the oxygen ranges from about 135 sccm to about 285 sccm and a flow rate of hydrogen ranges from about 375 sccm to about 1700 sccm and at a low frequency power ranging from about 5000 watts to about 6500 watts and a high frequency power ranging from about 750 watts to about 1300 watts, the passivating reducing fluorine contaminants in the dielectric material.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- forming trenches in a semiconductor substrate;
- and
- filling the trenches with a dielectric material, including:
- depositing the dielectric material with a plasma gas mixture;
- etching the dielectric material with a chemical etch including nitrogen fluoride;
- and
- passivating the dielectric material after etching with a gas mixture that includes oxygen and hydrogen.
4 more elements
A semiconductor device, comprising:
- isolation trenches located within a semiconductor wafer substrate filled with a dielectric material formed using a chemical etch including nitrogen trifluoride and a plasma deposition process, wherein the semiconductor substrate has a center to edge average fluorine concentration that is less than about 2.10E19 atoms/cm3 at a depth within the semiconductor substrate of about less than 5 microns;
- transistors located over and within the semiconductor substrate, each of the transistors isolated from each other by the isolation trenches and including a gate oxide located over the semiconductor substrate, a gate electrode located over the gate oxide, and source/drains located within the semiconductor substrate and adjacent the gate electrodes;
- dielectric layers located over the transistors;
- interconnects located over and within the dielectric layers that connect the transistors to other devices.
1 more element
Dependencies are inferred from the claim text.