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US 2008/0258232 A1Published application
Semiconductor device and method for producing the same
AssigneeSony Corporation
InventorAkira Mizumura
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, an insulating film disposed on the substrate, a resistor groove disposed in the insulating film, and a resistor disposed in the resistor groove. The resistor is separated from all side surfaces of the resistor groove by a predetermined distance.
Claims13
A semiconductor device comprising:
- a substrate;
- an insulating film disposed on the substrate;
- a resistor groove disposed in the insulating film;
- and
- a resistor disposed in the resistor groove, the resistor being separated from all side surfaces of the resistor groove by at least a predetermined distance.
2 more elements
A method for producing a semiconductor device, comprising the steps of:
- forming an insulating film on a substrate;
- forming a resistor groove in the insulating film;
- forming a conductive layer by depositing a conductive material over the entire surface of the substrate so as to fill the resistor groove;
- forming a mask layer in the resistor groove in a pattern separated from all side surfaces of the resistor groove by at least a predetermined distance;
- and
- forming a resistor by etching back the conductive layer using the mask layer as a mask.
3 more elements
Dependencies are inferred from the claim text.