Semiconductor device manufacturing method and display device

A display device comprising:

• a driving substrate made by forming a semiconductor film on a substrate and forming thin film transistors on said semiconductor film;
• and
• display elements formed on said driving substrate;
• areas for forming said display elements including areas for forming said thin film transistors being arranged in a two-dimensional pattern on said semiconductor film in said driving substrate;
• wherein said semiconductor film is formed through an annealing process of irradiating said semiconductor film with energy beams using a plurality of irradiating optical systems,
• in said annealing process,
• an area irradiated with said energy beams is divided into a single beam irradiated area irradiated by each of said plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of said single beam irradiated areas with energy beams,
• said boundary area is divided into a first irradiation part as a part for beam irradiation by one of said two irradiating optical systems and a second irradiation part as a part for beam irradiation by the other of said two irradiating optical systems,
• said first irradiation part, said second irradiation part, and said thin film transistor forming areas are arranged such that thin film transistor forming areas subjected to the beam irradiation by one of said two irradiating optical systems and thin film transistor forming areas subjected to the beam irradiation by the other of said two irradiating optical systems have a part where a thin film transistor forming area subjected to the beam irradiation by one of said two irradiating optical systems and a thin film transistor forming area subjected to the beam irradiation by the other of said two irradiating optical systems are mixed with each other in each of two-dimensional directions on said boundary area, and
• said semiconductor film is formed by performing beam irradiation using said plurality of irradiating optical systems.