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US 2008/0258145 A1Published application
Semiconductor Devices Including an Amorphous Region in an Interface Between a Device Isolation Layer and a Source/Drain Diffusion Layer
OwnerHyuk PARKinventor
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Abstract
Semiconductor devices and methods for fabricating the same are disclosed in which an amorphous layer is formed in an interface between a device isolation layer and a source or drain region to stably thin a silicide layer formed in the interface. A leakage current of the silicide layer formed in the interface between the device isolation layer and the source/drain region is reduced.
Claims17
A semiconductor device comprising:
- a semiconductor substrate including an active region and a field region;
- a device isolation layer in the field region;
- a gate electrode on the active region;
- source/drain regions on opposite sides of the gate electrode;
- and
- an amorphous layer in at least one of the source region and the drain region, adjacent to the device isolation layer.
3 more elements
Dependencies are inferred from the claim text.