Semiconductor structure having plural back-barrier layers for improved carrier confinement

A semiconductor structure, comprising:

• a channel layer having a conductive channel therein;
• at least a pair of back-barrier layers on a surface of the channel layer, one of such pair of back-barrier layers forming a heterojunction with the channel layer;
• a GaN layer disposed between, and forming heterojunctions with, the pair of backbarrier layers;
• wherein the pair of back-barrier layers create polarization fields along a common, predetermined direction constructively increasing the total polarization fields experienced by the channel layer to increase confinement of carriers in the conductive channel.

A semiconductor structure, comprising:

• a channel layer;
• at least a pair of polarization generating layers, one of such pair of polarization generating layers forming a heterojunction with the channel layer;
• a spacer layer disposed between, and forming heterojunctions with, the pair of polarization generating layers;
• wherein the polarization generating layers create polarization fields along a common, predetermined direction.

A semiconductor structure, comprising:

• a channel layer;
• a pair of back-barrier layers on a surface of the channel layer, one of such pair of back-barrier layers forming a heterojunction with the channel layer;
• a layer forming heterojunctions with the pair of back-barrier layers;
• wherein the pair of back-barrier layers create polarization fields along a common, predetermined direction.