Semiconductor device, method for fabricating thereof and method for increasing film stress

A method for forming a semiconductor device, comprising:

• providing a substrate having a first-conductive-type transistor and a second-conductive-type transistor formed thereon;
• forming a stress layer over the substrate to conformally cover the first-conductive-type transistor and the second-conductive-type transistor;
• forming a cap layer on the stress layer over the first-conductive-type transistor;
• performing a modification process;
• and
• removing the cap layer.

A method for increasing a stress of a layer suitable for a stress layer disposing over a substrate, wherein the stress layer conformally covers a P-type transistor and an N-type transistor on the substrate and the stress layer has a continuous interface, the method comprising:

• forming a cap layer on the stress layer over the P-type transistor;
• performing a modification process to increase a tensile stress of the stress layer over the N-type transistor;
• and
• removing the cap layer.