Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

A process for fabricating a semiconductor device, the process comprising:

• a step of patterning an insulating film formed above a substrate by dry etching through a mask pattern formed on the insulating film;
• and
• a step of cleaning, as a post-patterning treatment using a post-dry etching cleaning liquid composition, the substrate that has been subjected to the patterning of the insulating films,
• wherein the substrate is provided with a wiring material formed from at least one of copper and a copper alloy, and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide, which are exposed by dry etching,
• wherein the post-dry etching cleaning liquid composition comprises at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water.