Manufacturing method of electronic element
AssigneeSumitomo Electric Industries, Ltd.
InventorsYasuhiro Iguchi, Nobuyuki Mitsui
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Abstract
A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.
Claims8
A manufacturing method of a semiconductor element comprising removing an epitaxial layer with a width of 0.3 mm to 3 mm from a circumferential portion of an epitaxial wafer before a processing step for manufacturing a device on the epitaxial wafer, the epitaxial layer being composed of a thin film crystal epitaxially grown on an InP substrate or a GaAs substrate of the epitaxial wafer.
A manufacturing method of a semiconductor element comprising removing an epitaxial layer with a width of t to 5t from a circumferential portion of an epitaxial wafer having a thickness t before a processing step for manufacturing a device on the epitaxial wafer, the epitaxial layer being composed of a thin film crystal epitaxially grown on an InP substrate or a GaAs substrate of the epitaxial wafer.
A manufacturing method of a semiconductor element comprising removing an epitaxial layer with a width of t to 5t from a circumferential portion of an epitaxial wafer having a thickness t and removing a circumferential portion of a substrate in an amount s in the range of 0 μm<s≦10 μm before a processing step for manufacturing a device on the epitaxial wafer, the epitaxial layer being composed of a thin film crystal epitaxially grown on an InP substrate or a GaAs substrate of the epitaxial wafer.
Dependencies are inferred from the claim text.