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US 2008/0188073 A1Published application
Methods of forming a span comprising silicon dioxide
AssigneeMicron Technology, Inc.
InventorDavid H. Wells
Life of this patent
Estimating the term…
Abstract
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Claims24
1-152. (canceled)
A method of forming a span comprising silicon dioxide, comprising:
- forming an opening comprising sidewalls within a semiconductor substrate;
- relative to at least some portion of the sidewalls, selectively growing an elemental-form silicon-containing material to bridge across the opening to form a covered cavity within the opening;
- and
- oxidizing all of the selectively grown elemental-form silicon-containing material which covers the opening to form a silicon dioxide-comprising bridge across the opening over the cavity.
1 more element
A method of forming a span comprising silicon dioxide, comprising:
- forming an opening comprising sidewalls within a semiconductor substrate;
- relative to at least some portion of the sidewalls, selectively growing an elemental-form silicon-containing material to bridge across the opening to form a covered cavity within the opening;
- and
- oxidizing at least an outermost upper half of the selectively grown elemental-form silicon-containing material across the opening to form a silicon dioxide-comprising bridge across the opening over the cavity.
1 more element
175-262. (canceled)
Dependencies are inferred from the claim text.