Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device comprising:

• forming a first semiconductor film and a second semiconductor film over a substrate;
• forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film;
• doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction, and
• wherein the third region is in contact with the fourth region along the one direction.

A method for manufacturing a semiconductor device comprising:

• forming a first semiconductor film and a second semiconductor film over a substrate;
• forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film;
• forming a resist mask so as to cover the second gate electrode;
• doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region, a fourth region and a fifth region are formed in the second semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction,
• wherein the third region is in contact with the fourth region along the one direction, and
• wherein the fourth region is in contact with the fifth region along the one direction.

A method for manufacturing a semiconductor device comprising:

• forming a first semiconductor film and a second semiconductor film over a substrate;
• forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film;
• doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction, and
• wherein a direction from the fourth region to the third region is opposite to the one direction.

A method for manufacturing a semiconductor device comprising:

• forming a semiconductor film over a first substrate;
• forming a gate insulating film on the semiconductor film;
• forming a gate electrode on the gate insulating film;
• doping an impurity element into a portion of the semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction;
• forming a plurality of integrated circuits by using at least the semiconductor film;
• dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits;
• mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate;
• and
• electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element.

A method for manufacturing a semiconductor device comprising:

• forming a first semiconductor film and a second semiconductor film over a substrate;
• forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film;
• doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction, and
• wherein the third region is in contact with the fourth region along the one direction;
• forming a plurality of integrated circuits by using at least the semiconductor film;
• dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits;
• mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate;
• and
• electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element.

A method for manufacturing a semiconductor device comprising:

• forming a first semiconductor film and a second semiconductor film over a substrate;
• forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film;
• forming a resist mask so as to cover the second gate electrode;
• doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region, a fourth region and a fifth region are formed in the second semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction,
• wherein the third region is in contact with the fourth region along the one direction, and
• wherein the fourth region is in contact with the fifth region along the one direction;
• forming a plurality of integrated circuits by using at least the semiconductor film;
• dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits;
• mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate;
• and
• electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element.

A method for manufacturing a semiconductor device comprising:

• forming a first semiconductor film and a second semiconductor film over a substrate;
• forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film;
• doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film,
• wherein a direction from the second region to the first region is in consistent with the one direction, and
• wherein a direction from the fourth region to the third region is opposite to the one direction;
• forming a plurality of integrated circuits by using at least the semiconductor film;
• dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits;
• mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate;
• and
• electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element.