Methods of Manufacturing Non-Volatile Memory Devices Including Charge-Trapping Layers

A method of manufacturing a non-volatile memory device, the method comprising:

• forming a tunnel insulating layer, a charge-trapping layer, a blocking layer and a conductive layer on a substrate having a channel region;
• patterning the conductive layer to form a word line structure;
• etching the blocking layer and the charge-trapping layer using an aqueous acid solution as an etching solution to form a blocking layer pattern and a charge-trapping layer pattern over the channel region;
• and
• forming impurity regions at surface portions of the substrate on both sides of the channel region.