Method and Apparatus For Manufacturing A Semiconductor

An apparatus for orienting a crystal structure of a semiconductor substrate comprising a first layer having a first crystal lattice orientation and a second layer having a second crystal lattice orientation different from said first crystal lattice orientation, comprising:

• means for amorphizing a first set of portions of said second layer, while not amorphizing a second set of portions of said second layer;
• means for applying an external stress to said second layer;
• and
• means for annealing said substrate.

A method of manufacturing semiconductor devices, comprising:

• providing a semiconductor substrate comprising a first layer with a first crystal orientation and a second layer with a second crystal orientation different from said first orientation;
• amorphizing a first region of said second layer;
• applying an external stress to said second layer;
• heating said second layer above a recrystallization temperature;
• and
• forming a first device in said first region of said second layer and a second device in a second region of said second layer.

A method of fabricating semiconductor circuits, comprising:

• providing a semiconductor substrate;
• amorphizing a portion of said substrate;
• applying stress to said substrate;
• heating said substrate above a recrystallization temperature of said substrate;
• and
• fabricating electronic devices in said substrate.