Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a gate insulator film on a (100) plane of a semiconductor substrate;
• forming a gate electrode on the gate insulator film;
• forming a first gate film on a side of the gate electrode;
• implanting one of nitrogen, oxygen, carbon and argon as a first impurity into the semiconductor substrate, with using the first gate film as a mask;
• implanting a second impurity into a larger region than the region in which the first impurity is implanted in the semiconductor substrate;
• and
• crystallizing the semiconductor substrate implanted with the first impurity or the second impurity.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a gate insulator film on a (100) plane of a semiconductor substrate;
• forming a gate electrode on the gate insulator film;
• forming a first gate film on a side of the gate electrode;
• forming a second gate film on the first gate film;
• implanting one of nitrogen, oxygen, carbon and argon as a first impurity into the semiconductor substrate, with using the second gate film as a mask;
• removing the second gate film;
• implanting a second impurity into the semiconductor substrate, with using the first gate film as a mask;
• implanting the first impurity into a shallower depth than implantation depths of the first impurity and the second impurity, with using the first gate film as a mask, in a state of not having the second gate film;
• and
• crystallizing the semiconductor substrate implanted with the first impurity or the second impurity.