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US 2008/0188025 A1Published application
Semiconductor device manufacturing method
AssigneeOki Electric Industry Co., Ltd.
InventorMakiko Nakamura
Life of this patent
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Abstract
A movable structural body formed over a semiconductor substrate is covered with a sacrifice film. The sacrifice film is covered with a silicon oxide film. Further, through holes are defined in the silicon oxide film. The sacrifice film is removed through the through holes to form space between the movable structural body and the silicon oxide film. Aluminum or an aluminum alloy high in flowability is deposited over the silicon oxide film by a sputtering method to seal the through holes.
Claims7
A semiconductor device manufacturing method comprising the steps of:
- covering a movable structural body formed over a semiconductor substrate with a sacrifice film;
- covering the sacrifice film with a first sealing member;
- forming through holes in the first sealing member;
- removing the sacrifice film through the through holes and forming space between the structural body and the first sealing member;
- and
- depositing a second sealing member high in flowability over the first sealing member by a sputtering method thereby to seal the through holes.
3 more elements
Dependencies are inferred from the claim text.