Non-aqueous electrolyte secondary battery, examination method and manufacturing method for negative electrode thereof, and examination apparatus and manufacturing apparatus for negative electrode thereof

A method for manufacturing a negative electrode of a non-aqueous electrolyte secondary battery, the method comprising:

• forming an active material layer made of silicon or a silicon compound having a known composition, which is capable of electrochemically absorbing and releasing lithium ions, on a current collector made of a metal including at least any one of copper, nickel, titanium and iron by a gas phase method using silicon;
• irradiating the active material layer with an X-ray;
• measuring an attenuation amount of any one of a CuKα ray, a NiKα ray, a TiKα ray, and a FeKα ray, which is a fluorescent X-ray of the metal included in the current collector in fluorescent X-rays generated from the active material layer;
• and
• adjusting a condition for forming the active material layer so as to match the deposit amount of silicon or the silicon compound in the active material layer to a predetermined value based on the measured attenuation amount.

An apparatus for manufacturing a negative electrode of a non-aqueous electrolyte secondary battery, comprising:

• a formation section for forming an active material layer made of silicon or a silicon compound having a known composition, which is capable of electrochemically absorbing and releasing lithium ions, on a surface of a current collector made of a metal including at least any one of copper, nickel, titanium and iron by a gas phase method using silicon;
• an X-ray generating section for irradiating the active material layer with an X-ray;
• a measuring section for measuring an attenuation amount of any one of a CuKα ray, a NiKα ray, a TiKα ray, and a FeKα ray, which is a fluorescent X-ray of the metal included in the current collector in fluorescent X-rays generated from the active material layer;
• and
• a control section for adjusting the formation section so as to match the deposit amount of silicon or the silicon compound in the active material layer to a predetermined value based on the measured attenuation amount.