Novel Gesisn-Based Compounds, Templates, and Semiconductor Structures
AssigneeArizona Board of Regents
InventorsJohn Kouvetakis, Radek Roucka
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Abstract
The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01<y<0.11, and 0.26<x<0.35, and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II-VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II-VI active layer.
Claims25
A compound of formula Ge1−x−ySixSny, wherein 0.01<y≦0.11, and 0.26≦x<0.35.
The semiconductor structure of 6, wherein the active layer is a Group II-VI layer, and wherein the Group II-VI layer comprises an alloy selected from the group consisting of ZnSe, ZnS, ZnCdTe, CdS, ZnSeTe, ZnSTe, CdMnTe, CdTe, CdSe, and HgCdTe.
A semiconductor structure comprising:
- (a) an Si substrate;
- (b) a GeSn buffer layer formed over the substrate;
- and
- (c) an active layer formed over the buffer layer, wherein the active layer is selected from the group consisting of
- (i) a Group III-V layer;
- and
- (ii) a Group II-VI layer.
A semiconductor structure comprising:
- (a) an Si substrate;
- (b) a GeSn buffer layer formed over the substrate;
- (c) an SiGeSn template layer formed over the buffer layer;
- and
- (d) an active layer formed over the buffer layer, wherein the active layer is selected from the group consisting of
- (i) a Group III-V layer;
- (ii) a Group I1-VI layer;
- (iii) an SiGe layer;
- and
- (iv) a Ge layer.
Dependencies are inferred from the claim text.