Techniques for Patterning Features in Semiconductor Devices
AssigneeInternational Business Machines Corporation
InventorsScott D. Allen, Katherina E. Babich, Steven J. Holmes, Arpan P. Mahorowala, Dirk Pfeiffer, Richard Stephan Wise
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Abstract
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
Claims16
A lithographic structure, the lithographic structure comprising an antireflective material having a feature patterned therein, the feature having at least one reduced critical dimension.
Dependencies are inferred from the claim text.