Method of preparing vertically-aligned carbon nanotube under atmospheric and cold-wall heating treatments and making the same

A method of preparing vertically-aligned carbon nanotubes under atmospheric and cold-wall heating treatments and making the same comprising steps of:

• (a) obtaining a silicon (Si) substrate;
• (b) coating a buffer layer on said Si substrate and then a catalyst layer on said buffer layer by using an electron-beam gun (E-gun) evaporation system;
• (c) deposing said Si substrate into a reaction furnace for atmospheric pressure chemical vapor deposition (APCVD) to process a pre-treatment through a cold-wall heating treatment under an ammonia gas (NH3) with an external high frequency source and a perpendicularly-supplied gas material source, then transporting acetylene (C2H2) into said reaction furnace by hydrogen (H2) as a carbon source on growing carbon nanotubes;
• and
• (d) stopping supplying said N H3, said H2 and said C2H2 growing carbon nanotubes on said Si substrate, and taking out said Si substrate after lowering temperature to a room temperature.