Prevention of film deposition on pecvd process chamber wall

A substrate processing chamber, comprising:

• a chamber body comprising:
• a chamber bottom;
• and
• a sidewall;
• a substrate support comprising a support body, wherein the substrate support is disposed in the chamber body;
• and
• at least one wide RF ground strap comprising a first end coupled to the substrate support and a second end coupled to the chamber bottom.

A substrate processing chamber, comprising:

• a chamber body comprising a sidewall;
• a substrate support positioned in the chamber body;
• and
• at least one extension bar positioned along a peripheral edge of the substrate support.

A method of processing a substrate, comprising:

• providing a process chamber having a slit valve and a substrate support;
• providing RF power to a distribution plate disposed over the substrate support;
• flowing a gas through the distribution plate;
• plasma processing a substrate disposed on the substrate support;
• and
• reducing the generation of plasma adjacent to the slit valve.