Global matching methods used to fabricate semiconductor devices

A global matching method for semiconductor memory device fabrication, the method comprising:

• extracting a graphic data system (GDS) image and a scanning electron microscope (SEM) image of patterns in a region on a wafer;
• separately extracting first directional edges, which extend in a first direction, and second directional edges, which extend in a second direction different from the first direction, from each of the GDS image and the SEM image;
• matching the first directional edges of the GDS image and the first directional edges of the SEM image;
• and
• based on a result of the matching of the first directional edges, matching the second directional edges of the GDS image and the second directional edges of the SEM image, thereby completing pattern matching between the GDS image and the SEM image.

A global matching method for semiconductor memory device fabrication, the method comprising:

• extracting a graphic data system (GDS) image of patterns in a region on a wafer;
• separately extracting first directional edges, which extend in a first direction, and second directional edges, which extend in a second direction different from the first direction, from the GDS image;
• acquiring a scanning electron microscope (SEM) image of the pattern;
• separately extracting first directional edges, which extend in the first direction, and second directional edges, which extend in the second direction and are longer than the first directional edges, from the SEM image;
• matching the first directional edges of the GDS image and the first directional edges of the SEM image;
• and
• based on a result of the matching of the first directional edges, matching the second directional edges of the GDS image and the second directional edges of the SEM image, thereby completing pattern matching between the GDS image and the SEM image.

A global matching method for semiconductor memory device fabrication, the method comprising:

• extracting a GDS image of patterns in a predetermined region on a wafer;
• separately extracting first directional edges, which extend in a first direction, and second directional edges, which extend in a second direction different from the first direction, from the GDS image;
• measuring a scanning electron microscope (SEM) image of the pattern;
• separately extracting first directional edges, which extend in the first direction, and second directional edges, which extend in the second direction, from the SEM image;
• matching the first directional edges of the GDS image and the first directional edges of the SEM image;
• and
• based on a result of the matching of the first directional edges, matching the second directional edges of the GDS image and the second directional edges of the SEM image, thereby completing pattern matching between the GDS image and the SEM image.