Thick Pseudomorphic Nitride Epitaxial Layers
AssigneeCrystal IS, Inc.
InventorsLeo J. Schowalter, Joseph A. Smart, James R. Grandusky, Shiwen Liu
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Abstract
Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
Claims25
A semiconductor heterostructure comprising:
- an aluminum nitride single-crystal substrate;
- and
- at least one strained layer epitaxially grown thereover, the layer comprising at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof,
- wherein a thickness of the strained layer exceeds a predicted critical thickness associated therewith by at least a factor of 5.
A method for forming a semiconductor heterostructure, the method comprising:
- providing an aluminum nitride single-crystal substrate;
- and
- epitaxially depositing over the substrate a strained layer comprising at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof,
- wherein a thickness of the strained layer exceeds a predicted critical thickness associated therewith by at least a factor of 5.
A device selected from the group consisting of a field effect transistor, a light-emitting diode, and a laser diode, the device comprising at least a portion of a strained heterostructure including:
- an aluminum nitride single-crystal substrate;
- and
- at least one strained layer epitaxially grown thereover, the layer comprising at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof,
- wherein a thickness of the strained layer exceeds a predicted critical thickness associated therewith by at least a factor of 10.
A device selected from the group consisting of a field effect transistor, a light-emitting diode, and a laser diode, the device comprising at least a portion of a strained heterostructure including:
- an aluminum nitride single-crystal substrate;
- and
- a plurality of strained layers epitaxially grown thereover, each of the plurality of strained layers comprising at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof,
- wherein a total thickness of the plurality of strained layers exceeds a predicted critical thickness associated therewith by at least a factor of 10.
Dependencies are inferred from the claim text.