VCSEL, manufacturing method thereof, optical device, light irradiation device, data processing device, light sending device, optical spatial transmission device, and optical transmission system

A method for manufacturing a Vertical-Cavity Surface-Emitting Laser diode (VCSEL) comprising:

• forming a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region such that the current confining layer comprises a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer is higher than Al concentration of the second semiconductor layer, and optical thickness that is the sum of the thickness of the first and second semiconductor layers becomes λ/4 when oscillation wavelength of laser light is λ;
• forming a mesa structure such that at least a side surface of the current confining layer is exposed;
• and
• concurrently and selectively oxidizing the first and second semiconductor layers in the current confining layer from the side surface of the mesa structure.

An optical device comprising:

• a VCSEL;
• an electrical connecting terminal electrically coupled to the VCSEL;
• and
• an optical component for injecting light that is emitted from the VCSEL,
• the VCSEL including a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region, and a mesa structure formed such that at least a side surface of the current confining layer is exposed, and the current confining layer comprising a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer being higher than Al concentration of the second semiconductor layer, and optical thickness that is sum of the thickness of the first and second semiconductor layers being λ/4 when oscillation wavelength of laser light is λ, and the first and second semiconductor layers being selectively oxidized from the side surface of the mesa structure.

A light irradiation device comprising:

• a VCSEL;
• an optical component comprising at least one of a lens or a mirror;
• and
• an irradiation unit for irradiating light that is emitted from the VCSEL through the optical component,
• the VCSEL including a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region, and a mesa structure formed such that at least a side surface of the current confining layer is exposed, and the current confining layer comprising a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer being higher than Al concentration of the second semiconductor layer, and optical thickness that is sum of the thickness of the first and second semiconductor layers being λ/4 when oscillation wavelength of laser light is λ, and the first and second semiconductor layers being selectively oxidized from the side surface of the mesa structure.

A data processing device comprising:

• an optical device;
• and
• a sending unit for sending light that is emitted from the VCSEL,
• the optical device including the VCSEL, an electrical connecting terminal electrically coupled to the VCSEL, and an optical component for injecting light that is emitted from the VCSEL,
• the VCSEL including a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region, and a mesa structure formed such that at least a side surface of the current confining layer is exposed, and the current confining layer comprising a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer being higher than Al concentration of the second semiconductor layer, and optical thickness that is sum of the thickness of the first and second semiconductor layers being λ/4 when oscillation wavelength of laser light is λ, and the first and second semiconductor layers being selectively oxidized from the side surface of the mesa structure.

A light sending device comprising:

• an optical device;
• and
• a sending unit for sending light that is emitted from a VCSEL,
• the optical device including the VCSEL, an electrical connecting terminal electrically coupled to the VCSEL, and an optical component for injecting light that is emitted from the VCSEL,
• the VCSEL including a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region, and a mesa structure formed such that at least a side surface of the current confining layer is exposed, and the current confining layer comprising a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer being higher than Al concentration of the second semiconductor layer, and optical thickness that is sum of the thickness of the first and second semiconductor layers being λ/4 when oscillation wavelength of laser light is λ, and the first and second semiconductor layers being selectively oxidized from the side surface of the mesa structure.

An optical spatial transmission device comprising:

• an optical device;
• and
• a transmission unit for spatially transmitting light that is emitted from a VCSEL,
• the optical device including the VCSEL, an electrical connecting terminal electrically coupled to the VCSEL, and an optical component for injecting light that is emitted from the VCSEL,
• the VCSEL including a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region, and a mesa structure formed such that at least a side surface of the current confining layer is exposed, and the current confining layer comprising a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer being higher than Al concentration of the second semiconductor layer, and optical thickness that is sum of the thickness of the first and second semiconductor layers being λ/4 when oscillation wavelength of laser light is λ, and the first and second semiconductor layers being selectively oxidized from the side surface of the mesa structure.

An optical transmission system comprising:

• an optical device;
• and
• a transmission unit for transmitting light that is emitted from a VCSEL,
• the optical device including the VCSEL, an electrical connecting terminal electrically coupled to the VCSEL, and an optical component for injecting light that is emitted from the VCSEL,
• the VCSEL including a first semiconductor mirror layer of a first conductivity type on a substrate, an active region on the first semiconductor mirror layer, a second semiconductor mirror layer of a second conductivity type on the active region, and a current confining layer in proximity to the active region, and a mesa structure formed such that at least a side surface of the current confining layer is exposed, and the current confining layer comprising a first semiconductor layer including an Al-composition and a second semiconductor layer including an Al-composition and being formed nearer to the active region than the first semiconductor layer does, and Al concentration of the first semiconductor layer being higher than Al concentration of the second semiconductor layer, and optical thickness that is sum of the thickness of the first and second semiconductor layers being λ/4 when oscillation wavelength of laser light is λ, and the first and second semiconductor layers being selectively oxidized from the side surface of the mesa structure.