Circuit for use in a multiple block memory
AssigneeFreescale Semiconductor, Inc.
InventorsHamed Ghassemi, Huy B. Nguyen
Life of this patent
Estimating the term…
Loading patent…
AssigneeFreescale Semiconductor, Inc.
InventorsHamed Ghassemi, Huy B. Nguyen
Estimating the term…
A portion of a memory may include a first memory block, comprising a first memory cell coupled to a first memory data line, a second memory block, comprising a second memory cell coupled to a second memory data line, and a latch, having a first terminal and a second terminal. The portion of the memory may further include a first N-channel transistor, having a first current electrode coupled to the first terminal of the latch, having a second current electrode coupled to a first power supply voltage, and having a control electrode coupled to the first memory data line. The portion of the memory may further include a second N-channel transistor, having a first current electrode coupled to the first terminal of the latch, having a second current electrode coupled to the first power supply voltage, and having a control electrode coupled to the second memory data line.
A circuit portion, comprising:
A memory, comprising:
A method for multiplexing in a memory, the method comprising:
Dependencies are inferred from the claim text.