Redundancy circuit semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorSang-Hee KANG
Life of this patent
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Abstract
A redundancy circuit in a semiconductor memory device comprises a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals; a redundant selector; a spare redundant selector; and a spare fuse controller configured to be controlled by the redundancy enable signal, and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector in accordance with an internal fuse option.
Claims12
A semiconductor memory device having a redundancy circuit, the redundancy circuit comprising:
- a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals;
- a redundant selector configured to output a redundant selection signal;
- a spare redundant selector configured to output a spare redundant selection signal;
- and
- a spare fuse controller configured to be controlled by the redundancy enable signal, and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector in accordance with an internal fuse option during a normal mode.
A redundancy circuit in a semiconductor memory device comprising:
- a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals;
- a spare fuse unit configured to output a plurality of fuse-out signals of predetermined logic levels corresponding to an internal spare fuse option;
- a redundant selector configured to be controlled by a selection control signal applied from an exterior source, and to output the redundancy enable signal as a normal selection control signal;
- and
- a multiplexer configured to enable a redundant selection signal or a spare redundant selection signal in accordance with the plurality of fuse-out signals.
Dependencies are inferred from the claim text.