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US 2008/0186777 A1Published application
Relaxed metal pitch memory architectures
AssigneeMicron Technology, Inc.
InventorsLyle D. Jones, Roger W. Lindsay, Kirk D. Prall
Life of this patent
Estimating the term…
Abstract
A relaxed metal pitch architecture may include a bit line and a first active area string and a second active area string. The bit line may be directly coupled to the first active area string and to the second active area string. The relaxed metal pitch architecture may be applied to a non-volatile memory structure.
Claims31
A flash memory array comprising:
- a bit line;
- and
- a first active area string and a second active area string, wherein the bit line contacts the first active area string and the second active area string.
A process comprising:
- forming a first bit line over a semiconductive substrate including a first active area string and a second active area string, wherein the first bit line contacts the first active area string and the second active area string.
A computer system, comprising:
- a processor;
- a memory system coupled to the processor, including:
- a bit line;
- a first active area string and a second active area string, wherein the bit line contacts the first active area string and the second active area string;
- and
- an input/output (I/O) circuit coupled to the processor and the memory system.
3 more elements
Dependencies are inferred from the claim text.