Wordline voltage transfer apparatus, systems, and methods
AssigneeMicron Technology, Inc.
InventorsXiaojun Yu, Jin-man Han
Life of this patent
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Abstract
The apparatus and systems described herein may comprise a plurality of memory cells coupled to a local wordline, and a wordline drive circuit that includes a regulator coupled to a plurality of pass transistors and a string driver. The regulator may comprise a regulator transistor having a threshold voltage that is substantially the same as the threshold voltage of the string driver during memory cell program operations. In some embodiments, the regulator may comprise a cascode-connected pair of transistors. Methods of manufacturing and operating the apparatus and systems are also described.
Claims32
An apparatus, comprising:
- a plurality of memory cells coupled to a local wordline;
- and
- a wordline drive circuit including a regulator coupled to a plurality of pass transistors and a string driver, wherein the regulator comprises a regulator transistor having a threshold voltage (Vt) substantially the same as a threshold voltage (Vt) of the string driver during program operations associated with the plurality of memory cells.
An apparatus, comprising:
- a plurality of memory cells coupled to a local wordline;
- a wordline drive circuit comprising a charge pump;
- and
- a regulator coupled to the charge pump, a plurality of pass transistors, and a string driver, wherein the regulator comprises a regulator transistor having a threshold voltage (Vt) substantially the same as a threshold voltage (Vt) of the string driver during program operations associated with the plurality of memory cells
A semiconductor memory, comprising:
- a semiconductor memory package;
- and
- a substrate disposed within the semiconductor memory package, the substrate comprising a plurality of memory cells coupled to a local wordline and a wordline drive circuit including a regulator coupled to a plurality of pass transistors and a string driver, wherein the regulator comprises a regulator transistor having a threshold voltage (Vt) substantially the same as a threshold voltage (Vt) of the string driver during program operations associated with the plurality of memory cells.
A system, including:
- a processor to issue a program command;
- a display to display data processed by the processor;
- a plurality of memory cells coupled to a local wordline and operatively coupled to be selected in response to the program command issued by the processor;
- and
- a wordline drive circuit coupled to the local wordline, wherein the wordline drive circuit includes a regulator having a cascode-connected pair of transistors coupled to a plurality of pass transistors and a string driver.
A system, comprising:
- a processor to issue a program command;
- a display to display data processed by the processor;
- a cellular telephone receiver to receive the data and forming a portion of a wireless transceiver coupled to the processor;
- a plurality of memory cells coupled to a local wordline and operatively coupled to be selected in response to the program command issued by the processor;
- and
- a wordline drive circuit coupled to the local wordline, wherein the wordline drive circuit includes a regulator having a cascode-connected pair of transistors coupled to a plurality of pass transistors and a string driver.
A method, comprising:
- forming a memory array on a substrate, the memory array having a plurality of memory cells coupled to a local wordline;
- and
- forming a wordline drive circuit to couple to the local wordline, the wordline drive circuit including a regulator comprising a cascode-connected pair of transistors coupled to a plurality of pass transistors and a string driver.
A method, comprising:
- receiving a program command at a control circuit coupled to a memory array including a plurality of memory cells coupled to a local wordline;
- and
- transferring a global wordline voltage to the local wordline via a regulator having a cascode-connected pair of transistors.
A method, comprising:
- receiving a program command from a processor at a control circuit coupled to a memory array including a plurality of NAND flash memory cells coupled to a local wordline;
- and
- transferring a global wordline voltage to the local wordline via a regulator so as to have a substantially equal threshold voltage (Vt) associated with at least one of the transistors in the regulator and a string driver coupled to the local wordline.
Dependencies are inferred from the claim text.