Programmable fuse/non-volatile memory structures using externally heated phase change material

A method of forming a programmable phase change material (PCM) structure, the method comprising:

• forming a polysilicon layer over a semiconductor substrate, at a location corresponding to a transistor gate level of a semiconductor device;
• patterning the polysilicon layer so as to define a pair of electrodes and a thin wire structure connecting the electrodes;
• forming a silicide metal layer over the patterned polysilicon layer so as to define a heater element;
• and
• forming a layer of phase change material disposed on top of a portion of the thin wire structure of the heater element;
• wherein the portions of the silicide metal layer corresponding to the thin wire structure in contact with a portion of the phase change material are configured to selectively heat the portion of phase change material in a manner that programs the phase change material into one of a low resistance crystalline state and a high resistance amorphous state.