Magnetic random access memory and write method of the same

A write method of a magnetic random access memory including

• a first interconnection extending to a first direction;
• a second interconnection extending to a second direction perpendicular to the first direction;
• a magnetoresistive effect element formed between the first interconnection and the second interconnection at an intersection of the first interconnection and the second interconnection, having one terminal connected to the first interconnection, and comprising a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a film thickness of the fixed layer being larger than that of the recording layer, and a width of the fixed layer being larger than that of the recording layer;
• and
• a diode having one terminal connected to the other terminal of the magnetoresistive effect element, and the other terminal connected to the second interconnection,
• the method comprising:
• in the case of writing first data in the magnetoresistive effect element, reversing magnetization in the recording layer by supplying a first electric current between the fixed layer and the recording layer, and
• in the case of writing second data in the magnetoresistive effect element,
• generating a first magnetic field by supplying a second electric current to one of the first interconnection and the second interconnection, and reversing only magnetization in the fixed layer by applying the first magnetic field to the fixed layer,
• reversing magnetization in the recording layer by supplying a third electric current between the fixed layer and the recording layer in the same direction as that of the first electric current, and
• generating a second magnetic field by supplying a fourth electric current to one of the first interconnection and the second interconnection in a direction opposite to that of the second electric current, and reversing only magnetization in the fixed layer by applying the second magnetic field to the fixed layer.