Back to results
US 2008/0186651 A1Published application
Capacitor having electrodes at different depths to reduce parasitic capacitance
AssigneeInternational Business Machines Corporation
InventorsEric Thompson, Anil K. Chinthakindi
Life of this patent
Estimating the term…
Abstract
Capacitors are disclosed having reduced parasitic capacitance. In one embodiment, the capacitor includes a first set of electrodes, each electrode of the first set extending through at least one of a plurality of back-end-of-line (BEOL) layers above a substrate; a second set of electrodes, each electrode of the second set extending through at least one of the BEOL layers, and wherein each electrode of the second set extends to a greater depth of the plurality of BEOL layers than each electrode of the first set.
Claims2
1-20. (canceled)
A capacitor comprising:
- a first set of electrodes, each electrode of the first set extending through at least one of a plurality of back-end-of-line (BEOL) layers above a substrate;
- a second set of electrodes, each electrode of the second set extending through at least one of the BEOL layers, and
- wherein a BEOL layer closest to the substrate includes fewer electrodes than at least one layer farther from the substrate and each BEOL layer includes more electrodes than a BEOL layer therebelow.
Dependencies are inferred from the claim text.