Tunneling magnetic sensing element and method for producing same
OwnerKazumasa Nishimura, Ryo Nakabayashi +4inventors
InventorsKazumasa Nishimura, Ryo Nakabayashi, Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Masahiko Ishizone
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Abstract
A tunneling magnetic sensing element includes a pinned magnetic layer with a magnetization direction that is pinned in one direction, an insulating barrier layer, and a free magnetic layer with a magnetization direction that varies in response to an external magnetic field. The insulating barrier layer comprises magnesium (Mg), and a first protective layer composed of Mg is disposed on the free magnetic layer.
Claims8
A tunneling magnetic sensing element comprising:
- a pinned magnetic layer with a magnetization direction that is pinned in one direction;
- an insulating barrier layer;
- and
- a free magnetic layer with a magnetization direction that varies in response to an external magnetic field,
- wherein the insulating barrier layer comprises magnesium (Mg), and a first protective layer composed of Mg is disposed on the free magnetic layer.
A method for producing a tunneling magnetic sensing element comprising:
- (a) a step of forming a pinned magnetic layer and forming an insulating barrier layer comprising magnesium (Mg) on the pinned magnetic layer;
- (b) a step of forming a free magnetic layer on the insulating barrier layer;
- and
- (c) a step of forming a first protective layer composed of Mg on the free magnetic layer.
Dependencies are inferred from the claim text.