Condition assessment method for a structure including a semiconductor material

A method comprising:

• providing a structure to include a semiconductor material, the structure having a thickness;
• providing a target portion and a second portion of the structure;
• initiating a first feature to occur with the target portion;
• providing a first grating with the structure;
• providing a second grating with the structure spaced apart from the first grating through at least a portion of the thickness of the structure;
• and
• exposing the first grating, the second grating, and the target portion having the first feature with non-invasive illumination to produce a first optical interference pattern.

A method comprising:

• providing a structure to include a semiconductor material, the structure having a thickness;
• providing a target portion and a second portion of the structure;
• initiating a first feature to occur with the target portion;
• providing a first grating with the structure;
• providing a second grating apart from the structure;
• and
• exposing the first grating, the second grating, and the target portion having the first feature with non-invasive ilium A system comprising: