Nozzle plate, method of manufacturing nozzle plate, and image forming apparatus
AssigneeFUJIFILM Corporation
InventorShuji Takahashi
Life of this patent
Estimating the term…
Abstract
The nozzle plate has a nozzle hole formed therethrough, the nozzle hole being defined in the nozzle plate with an inner surface including a first liquid-philic portion, a liquid-phobic portion and a second liquid-philic portion that are arranged in this order from a side near the nozzle mouth, the first and second liquid-philic portions having liquid-philicity, the liquid-phobic portion having liquid-phoblicity.
Claims9
A nozzle plate having a nozzle hole formed through the nozzle plate, the nozzle hole having a nozzle mouth from which a liquid is ejected, the nozzle hole being defined in the nozzle plate with an inner surface including a first liquid-philic portion, a liquid-phobic portion and a second liquid-philic portion that are arranged in this order from a side near the nozzle mouth, the first and second liquid-philic portions having liquid-philicity, the liquid-phobic portion having liquid-phobicity.
A method of manufacturing a nozzle plate through which a nozzle hole is formed, the method comprising the steps of:
- forming the nozzle hole through an SOI substrate including a supporting layer, an active layer and an oxide film layer interposed between the supporting layer and the active layer, the nozzle hole having a nozzle mouth from which a liquid is ejected, the nozzle mouth opening on a surface on the active layer of the SOI substrate;
- then forming a liquid-phobic film on at least an inner surface defining the nozzle hole in the SOI substrate, the liquid-phobic film having liquid-phobicity;
- and
- then removing the liquid-phobic film other than a portion of the liquid-phobic film covering a portion of the inner surface defining the nozzle hole corresponding to the oxide film layer.
A method of manufacturing a nozzle plate through which a nozzle hole is formed, the method comprising the steps of:
- forming a first opening in an SOI substrate that includes a first active layer, a second active layer, a supporting layer, a first oxide film layer interposed between the first active layer and the second active layer, a second oxide film layer interposed between the second active layer and the supporting layer, by etching the first active layer, the first oxide film layer and the second active layer;
- forming a first liquid-phobic film on at least an inner surface defining the first opening in the SOI substrate;
- forming a second opening in the SOI substrate by etching the supporting layer and the second oxide film layer, the second opening connecting to the first opening to form the nozzle hole;
- forming a second liquid-phobic film on at least an inner surface defining the second opening in the SOI substrate;
- removing the first liquid-phobic film other than a portion of the first liquid-phobic film covering a portion of the inner surface defining the first opening corresponding to the first oxide film layer;
- and
- removing the second liquid-phobic film other than a portion of the second liquid-phobic film covering a portion of the inner surface defining the second opening corresponding to the second oxide film layer,
- wherein the first and second liquid-phobic films have liquid-phobicity, and the first liquid-phobic film has a surface energy lower than the second liquid-phobic film.
Dependencies are inferred from the claim text.