Apparatus for high power amplifier in wireless communication system
AssigneeSamsung Electronics Co., Ltd.
InventorJong-Hyun LEE
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Abstract
An apparatus for a High Power Amplifier (HPA) in a wireless communication system is provided. In one example, the apparatus includes a temperature sensor for determining temperature, a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature and an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.
Claims19
An apparatus for a High Power Amplifier (HPA) in a wireless communication system, the apparatus comprising:
- a temperature sensor for determining temperature;
- a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature;
- and
- an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.
An apparatus for a High Power Amplifier (HPA) in a wireless communication system, the apparatus comprising:
- a power supply for supplying a voltage;
- a temperature compensation circuit for controlling the supplied voltage according to temperature;
- and
- an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled voltage as a gate bias voltage.
An apparatus for a High Power Amplifier (HPA), the apparatus comprising:
- a power supply for supplying power;
- a sensor for providing a variable output depending on a sensed temperature;
- a control circuit for supplying a bias voltage corresponding to the sensed temperature;
- and
- an amplifier for amplifying a signal using the bias voltage.
Dependencies are inferred from the claim text.