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US 2008/0185722 A1Published application
Formation process of interconnect structures with air-gaps and sidewall spacers
OwnerChung-Shi Liu, Chen-Hua Yu +2inventors
InventorsChung-Shi Liu, Chen-Hua Yu, Yuh-Jier Mii, Yuan-Chen Sun
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Abstract
An integrated circuit structure having air gaps is provided. The integrated circuit includes a conductive line; a sidewall spacer on a sidewall of the conductive line, wherein the sidewall spacer comprises a dielectric material; an air-gap horizontally adjoining the sidewall spacer; and a dielectric layer on the air-gap.
Claims21
An integrated circuit structure comprising:
- a conductive line;
- a sidewall spacer on a sidewall of the conductive line, wherein the sidewall spacer comprises a dielectric material;
- an air-gap horizontally adjoining the sidewall spacer;
- and
- a dielectric layer on the air-gap.
2 more elements
An integrated circuit structure comprising:
- a first conductive line;
- a first sidewall spacer on a sidewall of the first conductive line;
- a second conductive line horizontally spaced apart from the first conductive line;
- a second sidewall spacer on a sidewall of the second conductive line;
- an air-gap horizontally adjoining the first and the second sidewall spacers;
- and
- a permeable dielectric layer on and adjoining the air-gap.
4 more elements
An integrated circuit structure comprising:
- a conductive line;
- a sidewall spacer on a sidewall of the conductive line;
- an air-gap horizontally adjoining the sidewall spacer;
- a permeable mask directly on the air-gap, wherein the sidewall spacer extends on a sidewall of the permeable mask;
- an etch stop layer on the conductive line and the permeable mask;
- and
- an inter-metal dielectric over the conductive line and the permeable mask.
4 more elements
Dependencies are inferred from the claim text.