Fin Pin Diode
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Louis Lu-Chen Hsu, Jack Allan Mandelman
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention generally relate to the field of semiconductor devices, and more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may protrude through a first doped layer. An intrinsic layer may be disposed on the protruding semiconductor fin. A second semiconductor layer may be disposed on the intrinsic layer, thereby forming a PIN diode compatible with FinFET technology and having increased junction area.
Claims29
A PIN diode comprising:
- a first doped layer formed on a semiconductor substrate comprising a base portion and a fin structure extending outwards from the base portion;
- a first insulator layer disposed on the base portion of the first doped layer, wherein a portion of the fin structure protrudes through an opening defined in the first insulator layer;
- an intrinsic layer disposed on the portion of the fin structure protruding through the first insulator layer;
- and
- a second doped layer disposed on the intrinsic layer.
A method for manufacturing a PIN diode, comprising:
- forming a first doped layer on a semiconductor substrate, the first doped layer having a base portion and a fin structure extending outwards from the base portion;
- forming a first insulator layer over the first doped layer so that a first portion of the fin structure is disposed in an opening defined in the first insulator layer and a second portion of the fin structure extends past the opening;
- forming an intrinsic layer over the second portion of the fin structure;
- and
- forming a second doped layer over the intrinsic layer.
A method for forming a semiconductor fin structure, comprising:
- doping a semiconductor layer disposed on an insulator layer, the insulator layer being disposed on a semiconductor substrate;
- forming a plurality of oxide layers and a plurality of nitride layers over the first doped layer;
- defining an aperture through the plurality of oxide layers and the plurality of nitride layers, wherein the aperture exposes a portion of the first doped layer;
- and
- epitaxially growing the semiconductor fin structure in the aperture.
Dependencies are inferred from the claim text.