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US 2008/0185687 A1Published application
Memory device and method for fabricating the same
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsJin-Pyo Hong, Young-Ho Do, June-Sik Kwak, Koo-Woong Jeong, Min-Su Park
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Abstract
A memory device includes a lower electrode layer formed over a substrate, a resistance layer including a metal nitride layer formed over the lower electrode layer, and an upper electrode layer formed over the resistance layer.
Claims46
A memory device, comprising:
- a lower electrode layer formed over a substrate;
- a resistance layer including a metal nitride layer formed over the lower electrode layer;
- and
- an upper electrode layer formed over the resistance layer.
1 more element
A non-volatile resistive random access memory (ReRAM) device, comprising:
- a lower electrode layer formed over a substrate;
- a resistance layer including a metal nitride layer formed over the lower electrode layer;
- and
- an upper electrode layer formed over the resistance layer.
1 more element
A method for fabricating a memory device, the method comprising:
- providing a substrate;
- forming a lower electrode layer over the substrate;
- forming a resistance layer including a metal nitride layer over the lower electrode layer;
- and
- forming an upper electrode layer over the resistance layer.
2 more elements
A method for fabricating a non-volatile ReRAM device, the method comprising:
- providing a substrate;
- forming a lower electrode layer over the substrate;
- forming a resistance layer including a metal nitride layer over the lower electrode layer;
- and
- forming an upper electrode layer over the resistance layer.
2 more elements
Dependencies are inferred from the claim text.