Structure and method for making on-chip capacitors with various capacitances
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Geng Wang
Life of this patent
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Abstract
A method for manufacturing a device includes forming trenches of different morphologies into a substrate. At the upper surfaces, the trenches have different orientations with respect to each other. In an aspect, windows for the trenches are aligned along the <100> and <110> directions of a silicon substrate. The trenches of different morphologies may be formed into capacitors having different capacitance levels. Also included are devices prepared by the method.
Claims20
A method of manufacturing a substrate having trenches in two or more morphologies, the method comprising:
- forming on a substrate, a first trench having a first aspect ratio and a first orientation;
- and
- forming on the substrate a second trench having a second aspect ratio, and a second orientation different from the first orientation;
- wherein at least one of the first and second aspect ratios is greater than 1.
A chip comprising at least a first and a second capacitor manufactured by:
- forming on a substrate a first trench having a first aspect ratio and a first orientation;
- forming on the substrate a second trench having a second aspect ratio and a second orientation different from the first orientation;
- and forming the first and second trenches into first and second capacitors;
- wherein at least one of the first and second aspect ratios is greater than 1.
A chip comprising at least a first and a second capacitor, wherein the first and second capacitors are respectively in first and second trenches in the chip, the chip comprising a substrate having an upper surface;
- a cross section of the first trench at the upper surface has a first aspect ratio and a first orientation;
- a cross section of the second trench at the upper surface has a second aspect ratio and a second orientation different from the first orientation.
Dependencies are inferred from the claim text.