Low-voltage organic thin film transistor and fabrication method thereof

A method of fabricating an organic thin film transistor, the method comprising:

• forming a gate electrode by depositing metal on a substrate;
• forming a dual gate dielectric layer on surfaces of the gate electrode, the forming of the dual gate dielectric layer including self-growing a metal oxide layer to a thickness lower than 10 nm through direct oxidation of the gate electrode in O2 plasma process at a low temperature lower than 100° C. and forming an organic dielectric layer on the metal oxide layer;
• forming source/drain electrodes on the dual gate dielectric layer such that the source/drain electrodes are spaced apart from each other;
• and
• depositing an organic semiconductor layer to cover the source/drain electrodes.

An organic thin film transistor comprising:

• a substrate;
• a gate electrode formed of a patterned metal on the substrate;
• a gate dielectric layer self-grown on the gate electrode in O2 plasma process at a low temperature lower than 100° C., the gate dielectric layer having a thickness lower than 10 nm;
• an organic semiconductor layer formed on the gate dielectric layer;
• and
• source/drain electrodes formed on the organic semiconductor layer, the source/drain electrodes being spaced apart from each other.

An organic thin film transistor comprising:

• a substrate;
• a gate electrode formed of a patterned metal on the substrate;
• a dual gate dielectric layer including a metal oxide layer and an organic dielectric layer, the metal oxide layer being self-grown on the gate electrode in O2 plasma process at a low temperature lower than 100° C. and having a thickness lower than 10 nm, and the organic dielectric layer being formed on the metal oxide layer;
• an organic semiconductor layer formed on the dual gate dielectric layer;
• and
• source/drain electrodes formed on the organic semiconductor layer, the source/drain electrodes being spaced apart from each other.

An organic thin film transistor comprising:

• a substrate;
• a gate electrode formed of a patterned metal on the substrate;
• a dual gate dielectric layer including a metal oxide layer and an organic dielectric layer, the metal oxide layer being self-grown on the gate electrode in O2 plasma process at a low temperature lower than 100° C. and having a thickness lower than 10 nm, and the organic dielectric layer being formed on the metal oxide layer;
• source/drain electrodes formed on the dual gate dielectric layer, the source/drain electrodes being spaced apart from each other;
• and
• an organic semiconductor layer formed on the source/drain electrodes.