Buried Stress Isolation for High-Performance CMOS Technology

A method of forming a field effect transistor (FET), said method comprising:

• forming a buried oxide (BOX) layer over a substrate;
• forming a current channel region over said BOX layer;
• forming a high-stress film in said BOX layer;
• configuring source/drain regions adjacent to said current channel region;
• and
• configuring a gate electrode over said current channel region,
• wherein said high-stress film creates mechanical stress in said current channel region.

A method of increasing a charge carrier mobility in a field effect transistor (FET), said method comprising:

• placing a buried oxide (BOX) layer over a substrate;
• configuring a current channel region over said BOX layer;
• implanting each of a source region and a drain region adjacent to said current channel region;
• forming a high-stress film in said BOX layer, wherein said high-stress film creates mechanical stress in said current channel region;
• configuring a gate electrode over said current channel region;
• and
• applying a voltage to said source region.

A field effect transistor (FET) comprising:

• a substrate;
• a buried oxide (BOX) layer over said substrate;
• a current channel region over said BOX layer;
• source/drain regions adjacent to said current channel region;
• a buried high-stress film in said BOX layer and regions of said substrate, wherein said high-stress film comprises any of a compressive film and a tensile film;
• an insulating layer covering said buried high-stress film;
• and
• a gate electrode over said current channel region,
• wherein said high-stress film is adapted to create mechanical stress in said current channel region,
• wherein said high-stress film is adapted to stretch said current channel region in order to create said mechanical stress in said current channel region;
• wherein said mechanical stress comprises any of compressive stress and tensile stress, and
• wherein said mechanical stress caused by said high-stress film causes an increased charge carrier mobility in said current channel region.