FinFET for device characterization

A method for forming a FinFET device for characterization comprising:

• forming an active fin comprising a source fin, a depletion fin, a drain fin, a side fin extending from the depletion fin, and a body contact coupled to the side fin for providing access for device characterization;
• and
• forming a dielectric layer and a gate electrode covering the depletion fin,
• wherein the gate electrode and the dielectric layer thereunder have a predetermined configuration to assure the source and drain fins are not shorted.

A FinFET device for characterization comprising:

• an active fin comprising a source fin, a body fin, and a drain fin;
• a first lightly-doped drain (LDD) region converting at least a portion of either the source or drain fin to be coupled with the body fin;
• a body contact heavily doped with a same type of material as the LDD region and coupled with the LDD region for providing access for device characterization;
• and
• a gate electrode formed over the body fin and separated therefrom by a predetermined dielectric layer.