Semiconductor structure including doped silicon carbon liner layer and method for fabrication thereof

A semiconductor structure comprising:

• a semiconductor substrate having a gate electrode located over a pedestal shaped channel region within the semiconductor substrate;
• a liner layer comprising a boron doped silicon carbon material having a first carbon content located upon a sidewall of the pedestal shaped channel region;
• and
• a source region and a drain region located at least in part within a semiconductor material layer located upon the liner layer and further laterally separated from the pedestal shaped channel region.

A method for fabricating a semiconductor structure comprising:

• etching a semiconductor substrate while using at least a gate electrode located over the semiconductor substrate as a mask to form a pedestal shaped channel region within the semiconductor substrate;
• forming a liner layer comprising an active doped silicon carbon material adjoining a sidewall of the pedestal shaped channel region;
• forming a semiconductor material layer upon the liner layer and further laterally separated from the pedestal shaped channel region;
• and
• forming a source region and a drain region at least in part within the semiconductor material layer.