Method for improving erase saturation in non-volatile memory devices and devices obtained thereof

A non-volatile memory device comprising:

• a charge supply region;
• a charge storage medium;
• a first insulating barrier between the charge supply region and the charge storage medium;
• a control region, wherein the control region and the charge supply region are on opposite sides of the charge storage medium;
• a second insulating barrier between the control region and the charge storage medium, wherein the second insulating barrier includes at least one high-k dielectric and at least one low-k dielectric, and wherein the second insulating barrier comprises:
• a first portion neighboring the control region;
• and
• a second portion neighboring the charge storage medium, wherein the first portion has on average a lower dielectric constant than the second portion.

A non-volatile memory device comprising:

• a charge storage medium;
• a first insulating barrier on a first side of the charge storage medium;
• a second insulating barrier on a second side of the charge storage medium opposite the first side, the second insulating barrier comprising a low-k layer and a high-k layer, wherein the high-k layer is adjacent to the charge storage medium;
• and
• means for applying, across the first insulating barrier, the second insulating barrier, and the charge storage medium, an electric field sufficient to induce carrier exchange across the first insulating barrier and not across the second insulating barrier.

A non-volatile memory device comprising:

• a channel region;
• a first dielectric layer on the channel region;
• a second dielectric layer on the first dielectric layer;
• a charge storage medium on the second dielectric layer;
• a third dielectric layer on the charge storage medium;
• a fourth dielectric layer on the third dielectric layer;
• and
• a control region on the fourth dielectric layer;
• wherein an average dielectric constant of the first dielectric layer is lower than an average dielectric constant of the second dielectric layer, and an average dielectric constant of the fourth layer is lower than an average dielectric constant of the third layer.