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US 2008/0185631 A1Published application
Dielectric layer for semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Ho LEE, Nae-In LEE
Life of this patent
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Abstract
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
Claims39
A multi-layer structure for a semiconductor device, comprising:
- a silicate interface layer;
- and
- a high-k dielectric layer overlying the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides.
A semiconductor device comprising:
- a substrate;
- a silicate interface layer formed over the substrate;
- a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides;
- a gate electrode;
- and
- a source/drain region formed adjacent the gate electrode.
3 more elements
A non-volatile memory, comprising:
- a substrate;
- a gate insulation layer;
- a floating gate overlying the substrate;
- a silicate interface layer formed over the floating gate;
- a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides;
- and
- a control gate overlying the high-k dielectric layer.
4 more elements
A non-volatile memory, comprising:
- a substrate;
- a silicate interface layer formed over the substrate;
- a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides;
- a floating gate overlying the substrate;
- an intergate dielectric layer;
- and
- a control gate overlying the intergate dielectric layer.
4 more elements
A capacitor for a semiconductor device, comprising:
- a lower electrode;
- a silicate interface layer formed over the lower electrode;
- a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides;
- and
- an upper electrode.
2 more elements
Dependencies are inferred from the claim text.