Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device comprising:

• forming a groove on a semiconductor substrate;
• forming a bit line acting as a source and a drain on a side of the groove in the semiconductor substrate;
• forming a pocket implantation region in the semiconductor substrate that contacts the bit line, the pocket implantation region having a similar conductivity type as the semiconductor substrate and having a dopant concentration higher than that of the semiconductor substrate;
• forming a bottom insulating membrane on and touching a side surface of the groove;
• and
• forming a charge accumulation layer on and touching a side surface of the bottom insulating membrane.

A semiconductor device comprising:

• a semiconductor substrate including a groove;
• a bit line that is formed in the semiconductor substrate and acts as a source and a drain;
• a pocket implantation region that contacts the bit line, the pocket implantation region has a similar conductivity type as the semiconductor substrate and a dopant concentration higher than that of the semiconductor substrate;
• an insulating membrane that is formed on a surface of the groove;
• and
• a charge accumulation layer that is formed on a surface of the insulating membrane.