Source/Drain to Gate Capacitive Switches and Wide Tuning Range Varactors
AssigneeUniversity of Florida Research Foundation, Inc.
InventorsSeong-Mo Yim, Kenneth Kyongyup O
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Abstract
A two-terminal capacitive circuit element 100 includes a MOS transistor including a source 126 and drain 127 separated by a body region 131, and a gate 105 separated from the body 129 by a gate insulator layer 110, and a bypass capacitor 125. The gate node (port2; 115) is AC grounded through the bypass capacitor 125 and the source 126 and drain 127 are tied together (port-1; 120). By toggling the transistor on and off using an appropriate gate to body voltage, the capacitance of the capacitive circuit element 100 between port-1 and port-2 significantly changes.
Claims7
A two-terminal capacitive circuit element, comprising:
- a MOS transistor including a source and drain separated by a body region and a gate separated from said body region by a gate insulator layer, and
- a bypass capacitor, wherein said gate is AC grounded through said bypass capacitor and said source and drain are tied together.
A method of providing a variable capacitance, comprising the steps of:
- providing a two-terminal capacitive circuit element comprising a MOS transistor including a source and drain separated by a channel region and a gate separated from said channel region by a gate insulator layer, and a bypass capacitor, wherein said gate is AC grounded through said bypass capacitor and said source and drain are tied together, and
- biasing said gate with a gate voltage toggling between a voltage exceeding a threshold of said MOS transistor and a gate voltage less than said threshold voltage.
Dependencies are inferred from the claim text.