Cmos image sensors
AssigneeSamsung Electronics Co., Ltd.
InventorsDuk-Min YI, Jong-Chae KIM, Jin-Hyeong PARK
Life of this patent
Estimating the term…
Abstract
A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.
Claims8
An image sensor comprising a plurality of pixel sensors, wherein each pixel sensor comprises:
- a photodiode region adapted to generate generating a electrical charges in response to incident light thereon;
- a global transfer transistor connected between the photodiode region and a first floating diffusion layer and having a gate adapted to receive a global transfer signal;
- a pixel transfer transistor connected between the first floating diffusion region and a second floating diffusion region and having a gate adapted to receive a pixel selection signal;
- a reset transistor connected between a power supply and the photodiode region and having a gate adapted to receive a reset signal;
- and,
- a source follower transistor connected between the power supply and a data output terminal and having a gate connected to the second floating diffusion layer.
Dependencies are inferred from the claim text.