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US 2008/0185620 A1Published application
Method of manufacturing a cmos image sensor
OwnerSheng-Chin Liinventor
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Abstract
The present invention relates to the method of manufacturing an image sensor, the method comprising providing a semiconductor substrate, which comprises a pixel array area and a logic area, a plurality of the photodiodes are formed on the semiconductor substrate of the pixel array area, a multilevel interconnect process is processed on the semiconductor substrate, a passivation is doping on the pixel array area and the logic area, removing the passivation on the pixel array area, and a plurality of the color filter arrays are formed on the pixel array area and correspond to the photodiode individually.
Claims8
A structure of an image sensor, comprising:
- a semiconductor substrate, which comprises a pixel array area and a logic area;
- a plurality of photodiodes formed on the pixel array area of the semiconductor substrate;
- at least one dielectric layer having a metal layer on the semiconductor substrate;
- a passivation only formed on the dielectric layer of the logic area;
- and
- a plurality of color filter arrays on the dielectric layer of the pixel area, wherein the color filter arrays are corresponding with the photodiodes.
3 more elements
Dependencies are inferred from the claim text.