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US 2008/0185615 A1Published application
Method and Apparatus for Double-Sided Biasing of Nonvolatile Memory
AssigneeMacronix International Co., Ltd.
InventorChao-I Wu
Life of this patent
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Abstract
Methods and apparatuses are disclosed for biasing the source-side and the drain-side of a nonvolatile memory to add electrons to the charge trapping structure.
Claims24
A method of operating a nonvolatile memory cell having a charge trapping structure to store charge and voltage terminals including a gate region, source and drain regions, and a body region, comprising:
- in response to an instruction to add electrons to the charge trapping structure, applying a bias arrangement to the voltage terminals, such that the bias arrangement includes positively biasing the source and drain regions relative to the body region and the bias arrangement includes positively biasing the gate region relative to the source and drain regions.
An integrated circuit, comprising:
- a nonvolatile memory cell including:
- a charge trapping structure to store charge;
- and
- voltage terminals including a gate region, source and drain regions, and a body region;
- control circuitry coupled to the nonvolatile memory cell, the control circuitry applying a bias arrangement to the voltage terminals in response to an instruction to add electrons to the charge trapping structure, such that the bias arrangement includes positively biasing the source and drain regions relative to the body region and the bias arrangement includes positively biasing the gate region relative to the source and drain regions.
2 more elements
Dependencies are inferred from the claim text.