Semiconductor device and manufacturing method
AssigneeFujitsu Limited
InventorsMasahiro FUKUDA, Yosuke SHIMAMUNE
Life of this patent
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Abstract
A semiconductor device has a Si substrate, a gate insulating film over the Si substrate, a gate electrode over the gate insulating film, a source region and a drain region in the Si substrate, wherein each of the source region and the drain region includes a first Si layer including Ge, an interlayer over the first Si layer, and a second Si layer including Ge over the interlayer, wherein the interlayer is composed of Si or Si including Ge, and a Ge concentration of the interlayer is less than a Ge concentration of the first Si layer and a Ge concentration of the second Si layer.
Claims20
A semiconductor device comprising:
- a Si substrate;
- a gate insulating film over the Si substrate;
- a gate electrode over the gate insulating film;
- a source region and a drain region in the Si substrate;
- wherein each of the source region and the drain region includes a first Si layer including Ge, an interlayer over the first Si layer, and a second Si layer including Ge over the interlayer, wherein the interlayer is composed of Si or Si including Ge, and a Ge concentration of the interlayer is less than a Ge concentration of the first Si layer and a Ge concentration of the second Si layer.
A semiconductor device comprising:
- a Si substrate;
- a gate insulating film over the Si substrate;
- a gate electrode over the gate insulating film;
- a source region and a drain region in the Si substrate;
- wherein the each of the source region and the drain region includes a first Si layer including C over the Si substrate, an interlayer over the first Si layer, and a second Si layer including C over the interlayer, wherein the interlayer is composed of Si or Si including C, and a C concentration of the interlayer is less than a C concentration of the first Si layer and a C concentration of the second Si layer.
A method of manufacturing a semiconductor device comprising:
- forming a gate insulating film and a gate electrode over a Si substrate;
- forming a recess in the Si substrate at both sides of the gate electrode;
- forming a first Si layer including Ge in the recess;
- forming an interlayer over the first Si layer;
- forming a second Si layer including Ge over the interlayer;
- wherein the interlayer is composed of Si or Si including Ge, and a Ge concentration of the interlayer is less than a Ge concentration of the first Si layer and a Ge concentration of the second Si layer.
A method of manufacturing a semiconductor device comprising:
- forming a gate insulating film and a gate electrode over a Si substrate;
- forming a recess in the Si substrate at both sides of the gate electrode;
- forming a first Si layer including C in the recess;
- forming a interlayer over the first Si layer;
- forming a second Si layer including C over the interlayer;
- wherein the interlayer is composed of Si or Si including C, and a C concentration of the interlayer is less than a C concentration of the first Si layer and a C concentration of the second Si layer.
Dependencies are inferred from the claim text.